BC560 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

General Description

SYMBOL BC559 BC560 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Tc=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Ts

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BC560 pnp silicon planar epitaxial transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	BC560
Manufacturer	CDIL
File Size	115.78 KB
Description	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BC560 Datasheet

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Other Datasheets by CDIL

Part Number	Description
BC560B	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC560C	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC549	NPN Transistor
BC549A	NPN Transistor
BC549B	NPN Transistor

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC559 BC560 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Tc=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 30 45 30 50 55 100 625 5 1.5 12 -55 to +150 V V V mA mW mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 ºC/W 83.