• Part: BC560C
  • Description: PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 115.78 KB
Download BC560C Datasheet PDF
Continental Device India
BC560C
DESCRIPTION SYMBOL BC559 BC560 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Tc=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD Tj, Tstg 30 45 30 50 55 100 625 5 1.5 12 -55 to +150 V V V m A m W m W/ºC W m W/ºC ºC THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 ºC/W 83.3 ºC/W Continental Device India Limited Data Sheet Page 1 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560, B, C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL...