• Part: MMBT3906
  • Description: PNP General Purpose Transistor
  • Category: Transistor
  • Manufacturer: LITEON
  • Size: 229.15 KB
Download MMBT3906 Datasheet PDF
LITEON
MMBT3906
MMBT3906 is PNP General Purpose Transistor manufactured by LITEON.
- Part of the MMBT3906-LITE comparator family.
FEATURES - For switching and amplifier applications. - plementary NPN Type Available (MMBT3904) MECHANICAL DATA - Case: SOT-23 Plastic - Case material: “Green” molding pound, UL flammability classification 94V-0, (No Br. Sb. CI) - Lead Free in Ro HS 2011/65/EU pliant Maximum Ratings @ TA = 25℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC RΘJA TJ TSTG Electrical Characteristics @ TA = 25℃ unless otherwise specified Characteristic Test Condition Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cut-off current Collector-base cut-off current Emitter-base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time IC=-10µA,IE=0 IC=-1m A,IB=0 IE=-10µA,IC=0 VCB=-40V,IE=0 VCE=-30V,VBE(off)=-3V VEB=-5V,IC=0 VCE=-1V,IC=-10m A VCE=-1V,IC=-50m A VCE=-1V,IC=-100m A IC=-50m A,IB=-5m A IC=-50m A,IB=-5m A VCE=-20V,IC=-10m A, f=100MHz VCC=-3V, VBE=-0.5V IC=-10m A , IB1=-IB2=-1m A VCC=-3V, IC=-10m A IB1=-IB2=-1m A VCBO VCEO VEBO ICBO ICEX IEBO h FE1 h FE2 h FE3 VCE(sat) VBE(sat) f T Td Tr Ts Tf Note: (1) Device mounted on FR- 5 board, 1.0 x 0.75 x 0.062 in. (2) Device mounted on Alumina substrate, 0.4 x 0.3 x 0.024 in. 99.5% alumina. Value -40 -40 -5 -200 200 556 (1) 417 (2) 150 -55~+150 Unit V V V m A m W ℃/W ℃...