LSB60R092GF Description
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max RDS(on),max 650V 0.092Ω IDM 120A Qg,typ 66nC.
LSB60R092GF Key Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 66nC)
- 100% UIS tested
- RoHS pliant