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LSB20N65 - N-channel MOSFET

Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

  • Ultra low RDS(on).
  • Ultra low gate charge (typ. Qg = 65nC).
  • 100% UIS tested.
  • RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Co.

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Datasheet Details

Part number LSB20N65
Manufacturer Lonten
File Size 661.70 KB
Description N-channel MOSFET
Datasheet download datasheet LSB20N65 Datasheet

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Full PDF Text Transcription

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LSB20N65 LonFET Lonten N-channel 650V, 20A, 0.15Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.15Ω IDM 60A Qg,typ 65nC Features  Ultra low RDS(on)  Ultra low gate charge (typ.
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