LSB11N65E Description
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.40Ω IDM 30A Qg,typ 34nC.
LSB11N65E Key Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 34nC)
- High body diode ruggedness
- Easy to use
- 100% UIS tested
- RoHS pliant