• Part: LDTA114GWT1G
  • Description: Bias Resistor Transistor
  • Category: Transistor
  • Manufacturer: LRC
  • Size: 505.13 KB
LDTA114GWT1G Datasheet (PDF) Download
LRC
LDTA114GWT1G

Key Features

  • Only the on/off conditions need to be set for operation, making the device design easy
  • V IC= -50µA Collector-emitter breakdown voltage BVCEO -50
  • V IC= -1mA Emitter-base breakdown voltage BVEBO -5
  • V IE= -720µA Collector cutoff current ICBO
  • 0.5 µA VCB= -50V Emitter cutoff current IEBO -300 - -580 µA VEB= -4V Collector-emitter saturation voltage VCE(sat)
  • 0.3 V IC= -10mA, IB= -0.5mA DC current transfer ratio hFE 30
  • DIMENSIONING AND TOLERANCING PER ANSI Y14.5M