- Part: LDTA114GWT3G
- Description: Bias Resistor Transistor
- Category: Transistor
- Manufacturer: LRC
- Size: 505.13 KB
Key Features
- Only the on/off conditions need to be set for operation, making the device design easy
- V IC= -50µA Collector-emitter breakdown voltage BVCEO -50
- V IC= -1mA Emitter-base breakdown voltage BVEBO -5
- V IE= -720µA Collector cutoff current ICBO
- 0.5 µA VCB= -50V Emitter cutoff current IEBO -300 - -580 µA VEB= -4V Collector-emitter saturation voltage VCE(sat)
- 0.3 V IC= -10mA, IB= -0.5mA DC current transfer ratio hFE 30
- DIMENSIONING AND TOLERANCING PER ANSI Y14.5M
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
LDTA114GLT3G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114GLT1G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114EWT1G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114WLT1G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114YLT1G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114TLT3G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114ELT1G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114WLT3G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114YLT3G
|
Leshan Radio Company |
Bias Resistor Transistor |
|
LDTA114TLT1G
|
Leshan Radio Company |
Bias Resistor Transistor |