Datasheet Summary
LESHAN RADIO PANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LN4812LT1G S-LN4812LT1G
LN4812LT3G S-LN4812LT3G
Marking N48 N48
Shipping 3000/Tape&Reel 10000/Tape&Reel
LN4812LT1G S-LN4812LT1G
1 2
SOT- 23 (TO- 236AB)
- Channel...