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LN4812LT1G - N-Channel Enhancement-Mode MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other.

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Datasheet Details

Part number LN4812LT1G
Manufacturer LRC
File Size 279.56 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet LN4812LT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.