2SA733M - SILICON PNP TRANSISTOR

LZG

Key Features

High hFE and excellent hFE linearity. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -50 V VEBO -5.0 V IC -150 mA IB -20 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition ICBO IEBO hFE VCE(sat) VBE fT Cob NF VCB=-60V IE=0 VEB=-5.0V IC=0 VCE=-6.0V IC=-1.0mA IC=-100mA IB=-10mA VCE=-6.0V IC=-1.0mA VCE=-6.0V IC=-10mA VCB=-10V VCE=-6.0V f=100Hz IE=0 f=1.0MHz IC=-0.3mA Rg=10kΩ Min 90 -0.55 1.

2SA733M silicon pnp transistor by LZG - Datasheet Preview

Datasheet Details

Part number	2SA733M
Manufacturer	LZG
File Size	341.08 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SA733M Datasheet

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Full PDF Text Transcription (Reference)

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2SA733M(3CG733M) PNP /SILICON PNP TRANSISTOR :。/Purpose: Driver stage of AF power amplifier. :hFE 、。/Features: High hFE and excellent hFE linearity. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -50 V VEBO -5.0 V IC -150 mA IB -20 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition ICBO IEBO hFE VCE(sat) VBE fT Cob NF VCB=-60V IE=0 VEB=-5.0V IC=0 VCE=-6.0V IC=-1.0mA IC=-100mA IB=-10mA VCE=-6.0V IC=-1.0mA VCE=-6.0V IC=-10mA VCB=-10V VCE=-6.0V f=100Hz IE=0 f=1.0MHz IC=-0.3mA Rg=10kΩ Min 90 -0.55 100 Rating Typ -0.18 -0.62 180 4.5 6.0 Max -0.1 -0.1 600 -0.3 -0.65 6.