L2SC4226QT1
L2SC4226QT1 is High-Frequency Amplifier Transistor manufactured by Leshan Radio Company.
DESCRIPTION
The L2SC4226QT1 is a low supply voltage transistor designed for VHF, U HF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package.
FEATURES
- Low Noise NF = 1.2 d B TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A
- High Gain |S21e| = 9.0 d B TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A
- Small Mini Mold Package EIAJ: SC-70
The information in this document is subject to change without notice.
L2SC4226QT1-1/5
..
LESHAN RADIO PANY, LTD.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 12 3 100 150 150
- 65 to +150 V V V m A m W °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure
SYMBOL ICBO IEBO h FE f T Cre |S21e|2 NF
MIN.
TYP.
MAX. 1.0 1.0
UNIT
TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, I C = 0 VCE = 3 V, IC = 7 m A
- 1
µA µA
125 3.0 4.5 0.7 7 9 1.2
250 GHz 1.5 p F d B 2.5 d B
VCE = 3 V, IC = 7 m A VCE = 3 V, IE = 0, f = 1 MHz
- 2 VCE = 3 V, IC = 7 m A, f = 1 GHz VCE = 3 V, IC = 7 m A, f = 1 GHz
- 1
- 2
Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. Measured with 3 terminals bridge, Emitter and Case should be grounded.
L2SC4226QT1-2/5
LESHAN RADIO PANY, LTD.
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 20 PT
- Total Power Dissipation
- m W Free Air 200 IC
- Collector Current
- m A VCE = 3 V
COLLECTOR CURRENT vs. BASE TO EMITTER...
