L2SC4226T1
L2SC4226T1 is High-Frequency Amplifier Transistor manufactured by Leshan Radio Company.
DESCRIPTION
The L2SC4226T1 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package.
FEATURES
- Low Noise NF = 1.2 d B TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A
- High Gain |S21e| = 9.0 d B TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A
- Small Mini Mold Package EIAJ: SC-70
Driver Marking
L2SC4226T1=R2
The information in this document is subject to change without notice.
L2SC4226T1-1/5
LESHAN RADIO PANY, LTD.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
.. Collector Current
VCBO VCEO VEBO IC PT Tj Tstg
20 12 3 100 150 150
- 65 to +150
V V V m A m W °C °C
Total Power Dissipation Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure
SYMBOL ICBO IEBO h FE f T Cre |S21e|2 NF
MIN.
TYP.
MAX. 1.0 1.0
UNIT
TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, I C = 0 VCE = 3 V, IC = 7 m A
- 1
µA µA
40 3.0
110 4.5 0.7
250 GHz 1.5 p F d B 2.5 d B
VCE = 3 V, IC = 7 m A VCE = 3 V, IE = 0, f = 1 MHz
- 2 VCE = 3 V, IC = 7 m A, f = 1 GHz VCE = 3 V, IC = 7 m A, f = 1 GHz
9 1.2
- 1
- 2
Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. Measured with 3 terminals bridge, Emitter and Case should be...
