L2SC4226T1G
L2SC4226T1G is High-Frequency Amplifier Transistor manufactured by Leshan Radio Company.
DESCRIPTION
The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product pliance with Ro HS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
FEATURES
- Low Noise
NF = 1.2 d B TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A
- High Gain
|S21e|2 = 9.0 d B TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A
- Small Mini Mold Package
EIAJ: SC-70
Driver Marking
L2SC4226T1G;S-L2SC4226T1G= R2
Ordering Information
Device
L2SC4226T1G S-L2SC4226T1G L2SC4226T3G S-L2SC4226T3G
Marking R2 R2
Shipping 3000/Tape&Reel
10000/Tape&Reel
The information in this document is subject to change without notice.
Rev.O 1/5
LESHAN RADIO PANY, LTD. L2SC4226T1G S-L2SC4226T1G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PT Tj Tstg
20 12 3 100 150 150
- 65 to +150
V V V m A m W °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure
SYMBOL ICBO IEBO h FE f T Cre |S21e|2 NF
MIN.
40 3.0 7
TYP.
110 4.5 0.7 9 1.2
MAX. 1.0 1.0 250
UNIT µA µA
GHz p F d B d...
