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LBAS316T1G - High speed diode

Description

planar technology, and encapsulated in the SOD323(SC76) SMD plastic package.

Features

  • Ultra small plastic SMD package.
  • High switching speed: max. 4 ns.
  • Continuous reverse voltage: max. 75 V.
  • Repetitive peak reverse voltage: max. 100 V.
  • Repetitive peak forward current: max. 500 mA.
  • We declare that the material of product compliance with RoHS requirements.
  • S- Prefix for Automotive and Other.

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Datasheet Details

Part number LBAS316T1G
Manufacturer Leshan Radio Company
File Size 221.20 KB
Description High speed diode
Datasheet download datasheet LBAS316T1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. High-speed diode DESCRIPTION The LBAS316T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323(SC76) SMD plastic package. FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 100 V · Repetitive peak forward current: max. 500 mA. · We declare that the material of product compliance with RoHS requirements. · S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS · High-speed switching in e.g. surface mounted circuits.
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