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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency controland tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio
MMBV3102LT1
22 pF(Nominal) 30Volts VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3 CATHODE
1 ANODE
1
2 CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS Rating
Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range
Symbol VR IF PD
TJ T stg
Value 30 200 225 1.