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MMBV3102LT1 - Silicon Tuning Diode

Key Features

  • High Q with Guaranteed Minimum Values at VHF Frequencies.
  • Controlled and Uniform Tuning Ratio.
  • Pb.
  • Free Package is Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MMBV3102LT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 30 200 225 1.8 +125 −55 to +150 Unit Vdc mAdc mW mW/°C °C °C http://onsemi.com 3 Cathode 1 Anode 3 1 2 Maximum ratings are those values beyond which device damage can occur.