MMBV3102LT1G Overview
MMBV3102LT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Derate above 25°C VR 30 Vdc IF 200 mAdc PD 225 mW 1.8 mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. http
MMBV3102LT1G Key Features
- High Q with Guaranteed Minimum Values at VHF Frequencies
- Controlled and Uniform Tuning Ratio
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
MMBV3102LT1G Applications
- High Q with Guaranteed Minimum Values at VHF Frequencies
