Datasheet4U Logo Datasheet4U.com

MMBV3102LT1G - Silicon Tuning Diode

Features

  • High Q with Guaranteed Minimum Values at VHF Frequencies.
  • Controlled and Uniform Tuning Ratio.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – MMBV3102LT1G

Datasheet Details

Part number MMBV3102LT1G
Manufacturer ON Semiconductor
File Size 105.16 KB
Description Silicon Tuning Diode
Datasheet download datasheet MMBV3102LT1G Datasheet
Additional preview pages of the MMBV3102LT1G datasheet.

📁 Similar Datasheet

  • MMBV3102LT1 - Silicon Tuning Diode (Motorola)
  • MMBV3102LT1 - Silicon Tuning Diode (Leshan Radio Company)
  • MMBV3401 - SURFACE MOUNT PIN DIODE (Pan Jit International)
  • MMBV3401 - General Purpose PIN Diode (Kexin)
  • MMBV3401LT1 - Silicon Pin Diode (Motorola)
  • MMBV3401LT1 - Silicon Ping Diode (Leshan Radio Company)
  • MMBV3700LT1 - High Voltage Silicon Pin Diodes (Motorola)
  • MMBV3700LT1 - Silicon Pin Diode (Leshan Radio Company)
  • MMBV3700LT1 - High Voltage Silicon Pin Diodes (ON)
  • MMBV105G - VOLTAGE VARIABLE CAPACITANCE DIODE (Motorola)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MMBV3102LT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C VR 30 Vdc IF 200 mAdc PD 225 mW 1.8 mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Published: |