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MMBV3102LT1G - Silicon Tuning Diode

Key Features

  • High Q with Guaranteed Minimum Values at VHF Frequencies.
  • Controlled and Uniform Tuning Ratio.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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MMBV3102LT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C VR 30 Vdc IF 200 mAdc PD 225 mW 1.8 mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.