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LSIC2SD065D20A - 20A SiC Schottky Barrier Diode

Features

  • AEC-Q101 qualified.
  • MSL1 Rated.
  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes.
  • RoHS compliant, lead-free, and halogen-free.

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LSIC2SD065D20A LSIC2SD065D20A 650 V, 20 A SiC Schottky Barrier Diode Silicon Carbide Schottky Diode Datasheet Agency Approvals and Environmental Environmental Approvals Pinout Diagram TO-263-2L Product Summary Characteristic VRRM IF (TC 135 °C) QC (VR: 0-400 V) Value 650 22 63 Unit V A nC Features • AEC-Q101 qualified • MSL1 Rated • Positive temperature coefficient for safe operation and ease of paralleling • 175 °C maximum operating junction temperature • Excellent surge capability • Extremely fast, temperature-independent switching behavior • Dramatically reduced switching losses compared to Si bipolar diodes • RoHS compliant, lead-free, and halogen-free Applications • Boost diodes in PFC or DC/DC stages • Switch-mode power supplies • Solar inverters • Uninterruptable power suppli
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