Description
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
Features
- AEC-Q101 qualified.
- Positive temperature coefficient for safe operation and ease of paralleling.
- 175 °C maximum operating junction temperature.
- Excellent surge capability.
- Extremely fast, temperature-independent switching behavior.
- Dramatically reduced switching losses compared to Si bipolar diodes
Circuit Diagram TO-220-2L
Case Case
12
1
2
Maximum Ratings
Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage
Conti.