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A2SHB - N-Channel MOSFET

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A2SHB N-Channel MOSFET by Low Power Semi - Datasheet Preview — Datasheet preview – A2SHB

Datasheet Details

Part number	A2SHB
Manufacturer	Low Power Semi
File Size	221.00 KB
Description	N-Channel MOSFET
Datasheet	A2SHB Datasheet
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A2SHB Product details

Description

The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

20V/3.5A, RDS(ON)=50mΩ(Typ. )@VGS=4.5V.
20V/3.0A, RDS(ON)=75mΩ(Typ. )@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
SOT23 Package.

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Published: Jun 10, 2019 |