| Part Number | A2SHB Datasheet |
|---|---|
| Manufacturer | HAOHAI |
| Overview |
3.7A, 20V N
N N-Channel Enhancement Mode Field Effect Transistor SMD
Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Le.
*20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V *High dense cell design for extremely low RDS(ON) *Rugged and reliable *Lead free product is acquired *SOT-23 Package *Marking Code: A2SHB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB（SO. |
A2SHB Datasheet and Specifications PDF
The A2SHB is a N-Channel MOSFET.
| Part Number | A2SHB Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Low Power Semi |
| Overview |
The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored t.
* 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V * 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V * Super high density cell design for extremely low RDS(ON) * SOT23 Package Applications * Portable Media Players * Cellular and Smart mobile phone * LCD * DSC Sensor * Wireless Card Marking Information Device Markin. |
| Part Number | A2SHB Datasheet |
|---|---|
| Description | SOT-23 FET |
| Manufacturer | YUSHIN |
| Overview | SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-Source Voltage - Gate- Source Voltage - Drain Curren. . |
| Part Number | A2SHB Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | SLS SEMICONDUCTOR |
| Overview | SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel Enhancement mode Field Effect Transistor) /MARKING: A2SHB /Features： 1、 ； 2、 ； /Applications： DC. 1、 ； 2、 ； /Applications： DC-DC 。 /Absolute maximum ratings(Ta=25℃) /Parameter -/Drain-Source Voltage -/Gate-Source Voltage （）/Continuous Drain Current /Power Dissipation / Thermal Resistance Junction to Ambient /Junction Temperature /Storage Temperature / Symbol VDS VGS ID PD RθJA Tj Tstg /Va. |