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MP4T80200 - NPN Transistor Medium Power

This page provides the datasheet information for the MP4T80200, a member of the MP4T80200_M NPN Transistor Medium Power family.

Datasheet Summary

Description

The MP4T80200 series of our medium power high gain npn transistor has a power output of 1.0 watts at 900 MHz when operated in a class C environment.

The typical applied voltage is from 6 to 10 volts, collector to emitter, with a 600mA max collector current.

Features

  • High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) B a se B o n d P a d E m itte r B o n d Pad MP4T80200 Die Outline MP4T80200.

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Datasheet preview – MP4T80200

Datasheet Details

Part number MP4T80200
Manufacturer M-pulse Microwave
File Size 170.52 KB
Description NPN Transistor Medium Power
Datasheet download datasheet MP4T80200 Datasheet
Additional preview pages of the MP4T80200 datasheet.

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Full PDF Text Transcription

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M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Features • • • High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) B a se B o n d P a d E m itte r B o n d Pad MP4T80200 Die Outline MP4T80200 Description The MP4T80200 series of our medium power high gain npn transistor has a power output of 1.0 watts at 900 MHz when operated in a class C environment. The typical applied voltage is from 6 to 10 volts, collector to emitter, with a 600mA max collector current. The MP4T802 family of transistors is available in chip (MP4T80200), 200mil BEO (MP4T802-510). B a lla s t R e s is to r s A c tiv e D e v ic e A reas (4) Die size = 450 X 750 uM Bottom of die is collector. www.DataSheet4U.
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