MA4AGBL912 Datasheet | MACOM Technology Solutions

Features  Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  Ro HS pliant Description M/A- Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. Al Ga As anodes, which utilize M/A- Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional Ga As or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low series resistance, 4Ω, low capacitance, 28f F, and an extremely fast switching speed of 5n S. It is fully passivated with silicon nitride and has an additional polymer coating for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and...