MA4AGBL912 Datasheet PDF - MA-COM AlGaAs Beamlead PIN Diode Specs

MA4AGBL912 - AlGaAs Beamlead PIN Diode

This page provides the datasheet information for the MA4AGBL912, a member of the MA4AGBL912-MA AlGaAs Beamlead PIN Diode family.

Datasheet Summary

Description

M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode.

AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.

Features

 Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  RoHS Compliant.

Datasheet Details

Part number	MA4AGBL912
Manufacturer	MA-COM
File Size	594.02 KB
Description	AlGaAs Beamlead PIN Diode
Datasheet	MA4AGBL912 Datasheet
Additional preview pages of the MA4AGBL912 datasheet.

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Full PDF Text Transcription

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MA4AGBL912 AlGaAs Beamlead PIN Diode Features  Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  RoHS Compliant Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low series resistance, 4Ω, low capacitance, 28fF, and an extremely fast switching speed of 5nS.

Published: Mar 23, 2019 |