MAAP-015030 Overview
The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for munication and radar applications.
MAAP-015030 Key Features
- 12 W X-Band Power Amplifier
- 21 dB Large Signal Gain
- 41 dBm Saturated Pulsed Output Power
- 40% Power Added Efficiency
- On Chip Gate Bias Circuit
- 100% On-wafer DC & RF Power Tested
- 100% Visual Inspection to MIL-STD-833
- Bare Die
- 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The