Download MAAP-015036 Datasheet PDF
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MAAP-015036 Key Features

  • 15 W Power Amplifier
  • 42 dBm Saturated Pulsed Output Power
  • 17 dB Large Signal Gain
  • PSAT >40% Power Added Efficiency
  • Dual Sided Bias Architecture
  • On Chip Bias Circuit
  • 100% On-Wafer DC, RF and Output Power
  • 100% Visual Inspection to MIL-STD-883 Method
  • 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal gain of 18 dB

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MAAP-015036 Description

The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal gain of 18 dB. This power amplifier uses GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallisation to allow a...