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MAAP-015035 - Power Amplifier

Download the MAAP-015035 datasheet PDF (MAAP-015035-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power amplifier.

Description

The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB.

Features

  • 12 W X-Band Power Amplifier.
  • 36 dB Small Signal Gain.
  • 41 dBm Saturated Pulsed Output Power.
  • 40% Power Added Efficiency.
  • On Chip Gate Bias Circuit.
  • 100% On-wafer DC & RF Power Tested.
  • 100% Visual Inspection to MIL-STD-833.
  • Bare Die.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAAP-015035-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Features  12 W X-Band Power Amplifier  36 dB Small Signal Gain  41 dBm Saturated Pulsed Output Power  40% Power Added Efficiency  On Chip Gate Bias Circuit  100% On-wafer DC & RF Power Tested  100% Visual Inspection to MIL-STD-833  Bare Die Description The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.
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