Download MAAP-015035 Datasheet PDF
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MAAP-015035 Key Features

  • 12 W X-Band Power Amplifier
  • 36 dB Small Signal Gain
  • 41 dBm Saturated Pulsed Output Power
  • 40% Power Added Efficiency
  • On Chip Gate Bias Circuit
  • 100% On-wafer DC & RF Power Tested
  • 100% Visual Inspection to MIL-STD-833
  • Bare Die
  • 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small sign

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MAAP-015035 Description

The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for...