MACOM Technology Solutions 2N5339
NPN Power Silicon Transistor
FEATURES
● JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/560● TO-39 (TO-205AD) Package Rev. V1
ELECTRICAL CHARACTERISTICS
Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current IC = 50 mAdc VCE = 100 Vdc VCE = 90 Vdc, VBE = 1.5 Vdc VCB = 100 Vdc V(BR)CEO Vdc ICEO ICEX µAdc ICBO µAdc Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics VEB = 6.0 Vdc IC = 0.5 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc IEBO µAdc HFE VCE(SAT) Vdc VBE(SAT) Vdc Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5 Adc,