Microsemi 2N5339
NPN POWER SILICON SWITCHING TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) @ TC = +25°C (3) – U3 Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Air 1) Derate linearly 5.71mW/°C for TA > 25°C 2) Derate linearly 100mW/°C for TC > 25°C 3) Derate linearly 434mW/°C for TC > 25°C – U3 Symbol VCEO VCBO VEBO IB IC PT Top , Tstg RθJA Value 100 100 6.0 1.0 5.0 1.0 17.5 75 -65 to +200 175ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERIS