Click to expand full text
CMPA3135060S
3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier
Description
The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach, enabling high power and power added efficiency to be achieved in a 7mm x 7mm, surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.
Typical Performance Over 3.1 - 3.
CMPA3135060S Datasheet
