MACOM Technology Solutions CMPA3135060S
The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This MMIC power amplifier contains a two-stage reactively matched amplifier design approach, enabling high power and power added efficiency to be achieved in a 7mm x 7mm, surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.| Part No. | CMPA3135060S |
|---|---|
| Datasheet | CMPA3135060S Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | GaN MMIC Power Amplifier |
| Buy | Stock & Price |
DESCRIPTION
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. Typical Performance Over 3.1 - 3.5 GHz (TC = 25ºC) Parameter Small Signal Gain1, 2 Output Power1, 3 Power Gain1, 3 Power Added Efficiency1, 3 3.1 GHz 37 72 29 55 Notes: 1 VDD = 50 V, IDQ = 260 mA 2 Measured at PIN = -20 dBm 3 Measured at PIN = 20 dBm and 300μs; Duty Cycle = 20% 3.3 GHz 37 83 29 55 3.5 GHz 36 87 29 57 Package Type: 7x7 QFN PN: CMPA3135060S Units dB W dB %FEATURES
● 3.1 - 3.5 GHz Operation● 75 W Typical Output Power
● 29 dB Power Gain
● 50-ohm Matched for Ease of Use
● Plastic Surface-Mount Package, 7x7 mm QFN
APPLICATIONS
● Air Traffic Control Radar● Defense Surveillance Radar
● Fire Control Radar
● Military Air, Land and Sea Radar
● Weather Radar Note:
FEATURES
are typical performance across frequency under 25°C operation. Please reference performance charts for additional details.
