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CMPA3135060S - GaN MMIC Power Amplifier

General Description

The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Key Features

  • 3.1 - 3.5 GHz Operation.
  • 75 W Typical Output Power.
  • 29 dB Power Gain.
  • 50-ohm Matched for Ease of Use.
  • Plastic Surface-Mount Package, 7x7 mm QFN.

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Full PDF Text Transcription for CMPA3135060S (Reference)

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CMPA3135060S 3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier Description The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based...

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a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach, enabling high power and power added efficiency to be achieved in a 7mm x 7mm, surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications. Typical Performance Over 3.1 - 3.

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