CMPA3135060S Overview
The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach, enabling...
CMPA3135060S Key Features
- 3.5 GHz Operation
- 75 W Typical Output Power
- 29 dB Power Gain
- 50-ohm Matched for Ease of Use
- Plastic Surface-Mount Package