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GTVA212701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

Description

The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band.

Features

  • input matching, high efficiency, and a thermally-enhanced earless package. Package Types: H-87265J-2 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Gain 20 40 16 20 Efficiency 12 0 8 -20 4 0 25 PAR @ 0.01% CCDF -40 g212701fa-gr1 -60 30 35 40 45 50 55 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.
  • Input matched.

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Datasheet preview – GTVA212701FA

Datasheet Details

Part number GTVA212701FA
Manufacturer MACOM
File Size 544.42 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTVA212701FA Datasheet
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Full PDF Text Transcription

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GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Description The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Package Types: H-87265J-2 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Gain 20 40 16 20 Efficiency 12 0 8 -20 4 0 25 PAR @ 0.
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