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MA4E2514 - Low and Medium Barrier Silicon Schottky Diode

General Description

The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Key Features

  • Extremely Low Parasitic Capitance and Inductance.
  • Surface Mountable in Microwave Circuits, No Wirebonds Required.
  • Rugged HMIC Construction with Polyimide Scratch Protection.
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours).
  • Lower Susceptibility to ESD Damage.

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MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours) • Lower Susceptibility to ESD Damage Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which acts as the low dispersion, low loss microstrip transmission medium.