Datasheet4U Logo Datasheet4U.com

MA4E2514 - SURMOUNT Low and Medium Barrier Silicon Schottky Diodes

General Description

The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Key Features

  • A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n B.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MA4E2514 Low and Medium Barrier Silicon Schottky Diode MACOM
MA4E2502 Silicon Schottky Diode MACOM
MA4E2054 Surface Mount Low Barrier Schottky Diode Tyco
MA4E2054 Surface Mount Low Barrier Schottky Diode MACOM
MA4E2160 GaAs Flip Chip Schottky Barrier Diodes MA-COM

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4E2513-1289 Silicon Schottky Diodes
MA4E2501-1290 SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
MA4E2502 Medium and High Barrier Silicon Schottky Diodes
MA4E2508 SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes
MA4E2532L-1113 SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 MA4E2514 Series Case Style 1116 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n B Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.