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MA4E2514 - SURMOUNT Low and Medium Barrier Silicon Schottky Diodes

Datasheet Summary

Description

The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Features

  • A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n B.

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Datasheet Details

Part number MA4E2514
Manufacturer Tyco Electronics
File Size 133.08 KB
Description SURMOUNT Low and Medium Barrier Silicon Schottky Diodes
Datasheet download datasheet MA4E2514 Datasheet
Additional preview pages of the MA4E2514 datasheet.

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Full PDF Text Transcription

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SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 MA4E2514 Series Case Style 1116 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n B Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.
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