MAPC-A3006-AB Overview
The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and mercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
MAPC-A3006-AB Key Features
- Saturated Power: 18 W
- Drain Efficiency: 70%
- Small Signal Gain: 12.5 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS- pliant