MAPC-A3006-AB
Description
The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process.
Key Features
- Saturated Power: 18 W
- Drain Efficiency: 70%
- Small Signal Gain: 12.5 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* pliant
Applications
- Military Radio
