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MAPC-A3006-AB - GaN on SiC Transistor

General Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process.

This transistor supports both defense and commercial related applications.

Key Features

  • Saturated Power: 18 W.
  • Drain Efficiency: 70%.
  • Small Signal Gain: 12.5 dB.
  • Lead-Free Air Cavity Ceramic Package.
  • RoHS.
  • Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Cavity Ceramic Package • RoHS* Compliant Applications • Avionics - TACAN, DME, IFF • Military Radio • L, S, C-band Radar • Electronic Warfare • ISM • General Amplification Description The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.