MAPC-A3007-AB Key Features
- Saturated Power: 30 W
- Drain Efficiency: 67%
- Small Signal Gain: 15 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS- pliant
- Part: MAPC-A3007-AB
- Manufacturer: MACOM Technology Solutions
- Size: 1.33 MB
Related MACOM Technology Solutions Datasheets
| Part Number | Description |
|---|---|
| MAPC-A3005-AD | GaN on SiC Transistor |
| MAPC-A3005-AS | GaN on SiC Transistor |
| MAPC-A3006-AB | GaN on SiC Transistor |
| MAPC-A3006-AS | GaN on SiC Transistor |
| MAPC-A1103 | GaN Amplifier |
MAPC-A3007-AB Description
The MAPC-A3007-AB is a 30 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and mercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3007-AB provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.