MAPC-A3007-AB Overview
The MAPC-A3007-AB is a 30 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and mercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3007-AB provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
MAPC-A3007-AB Key Features
- Saturated Power: 30 W
- Drain Efficiency: 67%
- Small Signal Gain: 15 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS- pliant