MAPC-A3006-AS Datasheet PDF - MACOM GaN on SiC Transistor Specs

MAPC-A3006-AS - GaN on SiC Transistor

This page provides the datasheet information for the MAPC-A3006-AS, a member of the MAPC-A3006-AB GaN on SiC Transistor family.

Datasheet Summary

Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process.

This transistor supports both defense and commercial related applications.

Features

Saturated Power: 18 W.
Drain Efficiency: 70%.
Small Signal Gain: 12.5 dB.
Lead-Free Air Cavity Ceramic Package.
RoHS.
Compliant.

Datasheet Details

Part number	MAPC-A3006-AS
Manufacturer	MACOM
File Size	1.35 MB
Description	GaN on SiC Transistor
Datasheet	MAPC-A3006-AS Datasheet
Additional preview pages of the MAPC-A3006-AS datasheet.

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Full PDF Text Transcription

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GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Cavity Ceramic Package • RoHS* Compliant Applications • Avionics - TACAN, DME, IFF • Military Radio • L, S, C-band Radar • Electronic Warfare • ISM • General Amplification Description The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.

Published: Dec 30, 2024 |