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MAPC-A3006-AS - GaN on SiC Transistor

Download the MAPC-A3006-AS datasheet PDF. This datasheet also covers the MAPC-A3006-AB variant, as both devices belong to the same gan on sic transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process.

This transistor supports both defense and commercial related applications.

Key Features

  • Saturated Power: 18 W.
  • Drain Efficiency: 70%.
  • Small Signal Gain: 12.5 dB.
  • Lead-Free Air Cavity Ceramic Package.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAPC-A3006-AB-MACOM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

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MAPC-A3006-AB GaN on SiC Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Cavity Ceramic Package • RoHS* Compliant Applications • Avionics - TACAN, DME, IFF • Military Radio • L, S, C-band Radar • Electronic Warfare • ISM • General Amplification Description The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.