MAPC-A3006-AS Key Features
- Saturated Power: 18 W
- Drain Efficiency: 70%
- Small Signal Gain: 12.5 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS- pliant
- Part: MAPC-A3006-AS
- Manufacturer: MACOM Technology Solutions
- Size: 1.35 MB
Related MACOM Technology Solutions Datasheets
| Part Number | Description |
|---|---|
| MAPC-A3006-AB | GaN on SiC Transistor |
| MAPC-A3005-AD | GaN on SiC Transistor |
| MAPC-A3005-AS | GaN on SiC Transistor |
| MAPC-A3007-AB | GaN on SiC Transistor |
| MAPC-A1103 | GaN Amplifier |
MAPC-A3006-AS Description
The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and mercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.