Micro Commercial Components DB3TG
SILICON BIDIRECTIONAL DIAC
FEATURES
The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors.● Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information)
● Moisture Sensitivity: Level 1 per J-STD-020C Intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control ,and heat control.
MAXIMUM RATINGS
Operating Temperature: -40oC to +125oC Storage Temperature: -40oC to +125oC Thermal Resistance Junction to Lead:167oC/W Thermal Resistance Junction to Ambient: 400oC/WELECTRICAL CHARACTERISTICS
@ 25oC Unless Otherwise Specified Power dissipation on Printed PC 150mW Circuit(l=10mm) TA=65oC Repetitive Peak on-state Current ITRM 2.0A t p=10us,f=120Hz Breakover Voltage Min Typ Max VBO 30 32 34V C=22nF(Note 3) Breakover Voltage Symmetry | + VBO | -|-V BO| ±2V C=22nF(Note 3) Output Voltage(Note 2) Vo(min) 5V Dynamic breakover voltage ( N o t e 2 ) ∆V 9V(Min) VBO and VF at 10mA Breakover Current(Note 2) IBO(max) 15uA C=22nF Rise Time(Note 2) Tr 2us(max) Leakage Current(Note 2) IB(max) 10uA VB =0.5VBO(max) Note: 1.