MLSM MJD3055
NPN Transistor
FEATURES
● Designed for General Purpose Amplifier and Low Speed SwitchingAPPLICATIONS
● Electrically Simiar to MJE3055● DC Current Gain Specified to10 Amperes MJD3055 Transistors(NPN) TO-252-2L top view Schematic diagram C MJD3055
● XXXX C B E Marking and pin assignment
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC ICP ① PC TJ,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current Collector Power Dissipation Operation Junction and Storage Temperature Range Value 70 60 5 10 20 1.25 -55~+150 Unit V V V A A W °C Ordering Information (Example) Type Package Marking Minimum Package(pcs) MJD3055 TO-252-2L MJD3055 2,500 Inner Box Quantity(pcs) 5,000 Outer Carton Quantity(pcs) Delivery Mode 35,000 13"reel Copyright©MLS Microelectronics Co., Ltd Rev 1.0 Page 1 Total 4 MJD3055 Transistors(NPN)ELECTRICAL CHARACTERISTICS
(TJ=25℃ unless otherwise noted) Symbol Parameter V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO...