STMicroelectronics MJD3055
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.| Part No. | MJD3055 |
|---|---|
| Datasheet | MJD3055 Download |
| Manufacturer |  STMicroelectronics |
| Description | Low voltage NPN power transistor |
| Buy | Stock & Price |
FEATURES
● Surface-mounting DPAK (TO-252) power package in tape and reel● Electrically similar to MJE3055T Application
● General purpose switching and amplifier
DESCRIPTION
E3 Product status link MJD3055T4 Product summary Order code MJD3055T4 Marking MJD3055 Package DPAK Packing Tape and reel DS13694 - Rev 1 - March 2021 For further information contact your local STMicroelectronics sales office. MJD3055T4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCBO Collector-base voltage (IE = 0 V) VCEO Collector-emitter voltage (IB = 0 A) VEBO Collector-base voltage (IC = 0 A) IC Collector current IB Base current PTOT Total power dissipation at Tc = 25°C Tstg Storage temperature range TJ Maximum operating junction temperature Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 70 V 60 V 5 V 10 A 6 A 20 W -65 to 150 °C 150 Value 6.25 100 Unit °C/W °C/W DS13694 - Rev 1 page 2/10 MJD3055T4 Electrical characteristics 2 Electrical characteristics Tcase = 25°C unless otherwise specified.
