MMBT2907 Datasheet | MLS Microelectronics

Features - Epitaxial planar die construction - plementary NPN Type available(MMBT2222) Transistor (PNP) M2B Marking and pin assignment SOT-23 top view Schematic diagram Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO Ic PD RθJA TJ , TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Operating and Storage Temperature Range Value -60 -40 -5 -600 250 500 -55~ +150 Electrical Characteristics (Ta=25℃ unless otherwise specified) Unit V V V m A m W ℃/W ℃ Symbol Parameter V(BR)CBO V(BR)CEO- V(BR)EBO ICBO IEBO ICEX h FE1 - h FE2- h FE3- VCE(sat)- VCE(sat)- VBE(sat)- VBE(sat)- f T td tr ts tf Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Transition frequency Rise time Storage time Fall time Test conditions IC=-10μA,IE=0 IC=-10m A,IB=0 IE=-10μA,IC=0 VCB=-50V,IE=0 VEB= -3V,IC=0 VCE=-30V,VBE(off) =-0.5V VCE=-10V,IC=-150m A VCE=-10V,IC=-0.1m A VCE=-10V,IC=-500m A IC= -150m A IB= -15m A IC= -500m A IB= -50m A IC=-150m A IB= -15m A IC=-500m A IB=-50m A VCE=-20V,Ic=-50m A,f=100MHz VCE=-30V,IC=-150m A,IB1=-15m A VCE=-6V,IC=-150m A, IB1=- IB2=- 15m A - Pulse test: tp≤300μs, δ≤0.02. Min Typ Max Unit -60 --...