MLSM MMBT2907
PNP Transistor
FEATURES
● Epitaxial planar die construction● Complementary NPN Type available(MMBT2222) MMBT2907 Transistor (PNP) C M2B B E Marking and pin assignment SOT-23 top view Schematic diagram
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO Ic PD RθJA TJ , TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Operating and Storage Temperature Range Value -60 -40 -5 -600 250 500 -55~ +150ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Unit V V V mA mW ℃/W ℃ Symbol Parameter V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO ICEX hFE1 * hFE2* hFE3* VCE(sat)* VCE(sat)* VBE(sat)* VBE(sat)* fT td tr ts tf Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Base -emitter satur...