MSN0790K - N-Channel Enhancement Mode Power MOS FET

Features

VDS = 70V,ID =90A RDS(ON) < 7m Ω @ VGS=10V (Typ:5.9mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Lead Free.

MSN0790K n-channel enhancement mode power mos fet by MORESEMI - Datasheet Preview

Datasheet Details

Part number	MSN0790K
Manufacturer	MORESEMI
File Size	450.72 KB
Description	N-Channel Enhancement Mode Power MOS FET
Datasheet	MSN0790K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MSN4688	MOSFET	maspower
MSNP06065G1	650V Silicon Carbide Schottky Diode	Msemitek

Other Datasheets by MORESEMI

Part Number	Description
MSN014WE	N-Channel Enhancement Mode Power MOSFET
MSN014WE	N-Channel MOSFET
MSN0205	N-Channel MOSFET
MSN0207E	N-Channel MOSFET
MSN0212W	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MSN0790K 70V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 70V,ID =90A RDS(ON) < 7m Ω @ VGS=10V (Typ:5.

Published: Mar 13, 2017 |