Datasheet Summary
600V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
- VDS =600V,ID =4A RDS(ON) <2.4 Ω @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Lead Free
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
TO-220F-3L
Reel...