MT Semiconductor MT3113
125V 130A N-Channel Power MOSFET
| Part No. | MT3113 |
|---|---|
| Datasheet | MT3113 Download |
| Manufacturer |  MT Semiconductor |
| Description | 125V 130A N-Channel Power MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Rating Unit 125 ±25 175 -55 to 175 130 V °C °C A ZZZ PWVHPL FRP Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 410** 130 93 278 139 0.54 62.5 EAS Avalanche Energy, Single Pulsed L=0.5mH Notej* Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=90V 720***ELECTRICAL CHARACTERISTICS
(TC = 25°C Unless Otherwise Noted) MT3113/B A A W °C/W mJ Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current...
