MT3114B
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Typ RDS (on)=6.8m: / VGS =10V,ID =60A
Fast Switching Speed Low Gate Charge 100% avalanche tested
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
TC=25°C
Rating
Unit
100 ±25 175 -55 to 175 120
°C °C A
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Mounted on Large Heat Sink
IDM Pulsed Drain Current
- ID Continuous Drain Current
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