MT3113B
MT3113/B
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Typ RDS (on)=7.7m: / VGS =10V,ID =65A
Fast Switching Speed Low Gate Charge 100% avalanche tested
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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TO-252
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current
TC=25°C
Rating
Unit
125 ±25 175 -55 to 175 130
°C °C A
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Mounted on Large Heat Sink
IDM Pulsed Drain Current
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