MT3117
MT3117/B
1&KDQQHO9$3RZHU026)(7
)HDWXUHV
Typ RDS (on)=6.3m: / VGS =10V,ID =85A
Fast Switching Speed Low Gate Charge 100% avalanche tested
- HQHUDO'HVFULSWLRQ
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
$SSOLFDWLRQV
'&'&SULPDUEULGJH '&'&6QFKURQRXVUHFWLILFDWLRQ 3RZHU0DQDJHPHPHQWIRU,QYHUWHU6VWHPV
TO-252
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current
TC=25°C
Rating
Unit
125 ±25 175 -55 to 175 170
°C °C A
ZZZPWVHPLFRP
Mounted on Large Heat Sink
IDM Pulsed Drain Current
- ID...
