MT3240B Datasheet | MT Semiconductor

MT3240A/B N-Channel Low Q g - MOSFET 40V,250A,2.3mΩ )HDWXUHV ‡ Max RDS (on)=2.3m: at VGS =10V,ID=40A ‡ High performance trench technology for extremely low RDS (on) ‡ Low Gate Charge ‡High power and current handing capability - HQHUDO'HVFULSWLRQ This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. $SSOLFDWLRQV ‡ '&'&SULPDUEULGJH ‡ '&'&6QFKURQRXVUHFWLILFDWLRQ ‡3RZHU0DQDJHPHPHQWIRU,QYHUWHU6VWHPV G DS TO-220FB-3L TO-263-2L ZZZPWVHPLFRP MT3240A/B Absolute Maximum Ratings Symbol Parameter Rating mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 40 ±20 175 -55 to 175 250 IDM Pulsed Drain Current - ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 805- - 250 162 288 144 0.52...