MT3245 Datasheet | MT Semiconductor

® MOS-TECH Semiconductor Co.,LTD 07 N-Channel Power MOSFET 4V, A, mΩ Features - RDS(on) = 3mΩ (Typ.)@ VGS = 10V, ID = 80A - Qg(tot) = 345nC (Typ.)@ VGS = 10V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - RoHS pliant January 2010 Application - Automotive Engine Control - Powertrain Management - Motors, Solenoids - Electronic Steering - Integrated Starter/ Alternator - Distributed Power Architectures and VRMs - Primary Switch for 12V Systems TO-220 MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter VDSS VGSS IDM EAS PD Drain to Source Voltage Gate to Source Voltage...