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MT3240B/B
N-Channel
Low
Q g
MOSFET
40V, 208A, 2.5mΩ
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Max RDS (on)=2.5m: at VGS =10V,ID =40A
High performance trench technology for extremely low RDS (on)
Low Gate Charge High power and current handing capability
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
MT3240BB Datasheet
