29F001TPC Datasheet | Macronix

FEATURES 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30m A maximum active current(5MHz) - 1u A typical standby current - mand register architecture - Byte Programming (7us typical) - Sector Erase (8K-Byte x 1, 4K-Byte x 2, 8K Byte x 2, 32K-Byte x 1, and 64K-Byte x 1) - Auto Erase (chip & sector) and Auto Program - Automatically erase any bination of sectors with Erase Suspend capability. - Automatically programs and verifies data at specified address - Erase Suspend/Erase Resume - Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation. - - - - - Status Reply - Data polling & Toggle bit for detection of program and erase cycle pletion. - Chip protect/unprotect for 5V only system or 5V/12V system - 100,000 minimum erase/program cycles - Latch-up protected to 100m A from -1 to VCC+1V - Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector - Low VCC write inhibit is equal to or less than 3.2V - Package type: - 32-pin PLCC - 32-pin TSOP - 32-pin PDIP - Boot Code Sector Architecture - T=Top Boot Sector - B=Bottom Boot Sector - 20 years data retention GENERAL DESCRIPTION The MX29F001T/B is a 1-mega bit Flash memory organized as 128K bytes of 8 bits only MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F001T/B is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard MX29F001T/B offers access time 90ns. To eliminate bus contention, the MX29F001T/ B has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F001T/B uses a mand register to manage this functionality. The mand register allows for 100% TTL level control inputs and fixed...