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MX29F001T/B
1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES
5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architecture - Byte Programming (7us typical) - Sector Erase (8K-Byte x 1, 4K-Byte x 2, 8K Byte x 2, 32K-Byte x 1, and 64K-Byte x 1) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically programs and verifies data at specified address • Erase Suspend/Erase Resume – Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.