Datasheet Summary
MX29F100T/B
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY Features
- -
- - 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption
- 40mA maximum active current(5MHz)
- 1uA typical standby current mand register architecture
- Byte/ Word Programming (7us/ 12us typical)
- Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x1) Auto Erase (chip) and Auto Program
- Automatically erase any bination of sectors or with Erase Suspend capability.
- Automatically program and verify data at specified address Status Reply
- Data polling & Toggle bit for detection of program and erase cycle pletion. patibility with JEDEC...