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MX29F100B - 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

Download the MX29F100B datasheet PDF. This datasheet also covers the MX29F100T variant, as both devices belong to the same 1m-bit [128kx8/64kx16] cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words.

MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP.

Key Features

  • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Programming (7us/ 12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x1) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or with Erase Suspend capability. - Automatical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX29F100T-MacronixInternational.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX29F100B
Manufacturer Macronix
File Size 702.68 KB
Description 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
Datasheet download datasheet MX29F100B Datasheet

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Other Datasheets by Macronix

Part Number Description
MX29F100T 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Programming (7us/ 12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x1) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or with Erase Suspend capability. - Automatically program and verify data at specified address Status Reply - Data polling & Toggle bit for detection of program and erase cycle completion.